Improved Performance of MoS2 FETs using AlN/Al2O3 dielectricand Plasma Enhanced Atomic Layer Deposition (PEALD)

Authors

  • Edward Yi Chang International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC) Author
  • Tsu-Ting Lee International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC) Author
  • Kashi Chiranjeevulu Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC Author
  • Chih-Hsuan Hu International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC) Author
  • Sireesha Pedaballi International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC) Author
  • Ching-Ting Lee Department of Photonics, National Cheng Kung University, Tainan 70101, Taiwan (ROC) Author
  • Chang-Fu Dee Institute of Microengineering and Nanoelectronics (IMEN), University of Kebangsaan Malaysia 43600 Bangi, Selangor, Malaysia Author

DOI:

https://doi.org/10.47363/JNSRR/2022(4)131

Keywords:

2D Martials, PEALD, TMDCs, MoS2 FET, Resistance, Top-Gate Dielectric

Abstract

Molybdenum disulfide (MoS2) transistors are emerging as an exciting material system for future electronics due to their unique electrical properties, two dimensional (2D) nature and atomically thin geometry. This ultra-thin-body (UTB) semiconductor considerably reduces current leakage and enables gate-to-channel control. The homogeneous growth of sub-10 nm dielectrics on 2D materials remains challenging. We demonstrate high-performance MoS2 FETs at low temperature (150°C) using the plasma-enhanced Atomic layer deposition (PEALD) technique. The device exhibits a high on/off current ratio of about 106, the field-effect mobility of 9.5 cm2/Vs, and a subthreshold swing (SS) of 171 mV/dec, which is comparable to the similar structure of the top gate device. In addition, we have demonstrated contact resistance on back-gate MoS2  FETs with and without dielectric capping.

Author Biographies

  • Edward Yi Chang, International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC)

    International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC)

  • Tsu-Ting Lee, International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC)

    International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC)

  • Kashi Chiranjeevulu, Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC

    Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC

  • Chih-Hsuan Hu, International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC)

    International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC)

  • Sireesha Pedaballi, International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC)

    International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (ROC)

  • Ching-Ting Lee, Department of Photonics, National Cheng Kung University, Tainan 70101, Taiwan (ROC)

    Department of Photonics, National Cheng Kung University, Tainan 70101, Taiwan (ROC)

  • Chang-Fu Dee, Institute of Microengineering and Nanoelectronics (IMEN), University of Kebangsaan Malaysia 43600 Bangi, Selangor, Malaysia


    Institute of Microengineering and Nanoelectronics (IMEN), University of Kebangsaan Malaysia 43600 Bangi, Selangor, Malaysia 

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Published

2022-01-30

Issue

Vol. 4 No. 1 (2022): Volume 4 Issue 1

Section

Articles