Automated Hyperspectral SIMS Nanoanalytics for Advanced Semiconductor Failure Analysis

Abstract

As semiconductor devices become increasingly complex and three-dimensional, traditional analytical techniques such as SEM-EDS often struggle to deliver the spatial resolution and chemical sensitivity required for advanced failure analysis. Critical features such as deeply buried interfaces, nanoscale defects, and trace contamination can remain undetected using conventional imaging and microanalysis approaches.

In this work, we present an automated magnetic-sector Secondary Ion Mass Spectrometry (SIMS) platform based on the IONMASTER system, designed for high-resolution semiconductor nanoanalytics. The system combines a vertical focused ion beam (FIB) column equipped with a Liquid Metal Alloy Ion Source (LMAIS), a dedicated magnetic-sector SIMS analyzer, and a laser interferometer-controlled stage, enabling hyperspectral chemical imaging with lateral resolution below 20 nm while maintaining high ion transmission efficiency.

Direct import of GDSII and KLARF data enables automated and highly accurate navigation to regions of interest (ROIs), facilitating the investigation of buried structures and electrically identified failure sites. Application examples demonstrate isotopic imaging, detection of subsurface contamination, and three-dimensional chemical reconstruction of buried device features. These results highlight the potential of high-resolution SIMS to address critical analytical challenges and extend the capabilities of semiconductor failure analysis beyond those achievable with conventional techniques [1].