Influence of Ac-Signal Amplitude on the Dielectric Properties of Al-Tiw-Ptsi/N-Si Schottky Diodes

Authors

  • Izzat Afandiyeva Baku State University, Institute for Physics Problem, Baku, Azerbaijan Author
  • Elvin Bakhtiyarli Baku State University, Institute for Physics Problem, Baku, Azerbaijan Author

DOI:

https://doi.org/10.47363/JMSMR/2024(5)181

Keywords:

Silicide–Silicon Contact, Ptsi/N-Si Schottky Diodes, Dielectric Properties, Dielectric Loss, Electric Modulus, Ac Electrical Conductivity, Power Dissipated

Abstract

Influence of ac-signal amplitude on the dielectric properties of Al-TiW-PtSi/n-Si Schottky diode has been investigated at the room temperature and bias voltage in the range of -2V÷4V, when the amplitude of test signal (500 kHz) changed from 5mV to 1V. By the using impedance method have been obtained real ( εꞌ ) and imaginary (εꞌ) parts of dielectric constants and electric modul ( Mꞌ and Mꞌꞌ ) , loss tangent ( tanδ ), ac electrical conductivity ( σac ), the series resistance ( Rs ), On all dependences on voltage and amplitude of ac-signal , there is a jump in the value of the parameter in the range of voltage values 1-2V and 200mV It can be concluded that, at certain values, the amplitude of the ac-signal can significantly affect the interfacial polarization even at high frequencies.

Author Biographies

  • Izzat Afandiyeva, Baku State University, Institute for Physics Problem, Baku, Azerbaijan

    Baku State University, Institute for Physics Problem, Baku, Azerbaijan

  • Elvin Bakhtiyarli, Baku State University, Institute for Physics Problem, Baku, Azerbaijan

    Baku State University, Institute for Physics Problem, Baku, Azerbaijan

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Published

2024-07-08

Issue

Vol. 5 No. 7 (2024): Volume 5 Issue 7

Section

Articles