Photoconductivity of ZnS Thin Films Deposited by Solution-Processing Techniques

Abstract

We have explored various solution- processing techniques to produce ZnS thin films on conducting (ITO) and silicon substrates along with ZnS-porous silicon composite films. All these samples obtained from different methods and chemical recipes were annealed under fixed ambient conditions and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and ultraviolet photocurrent response. Various characterizations reveal that the fabrication conditions and intrinsic defects of ZnS play a vital role in optoelectronic performance.